PSMN4R2-30MLD_15 Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel 30 V, 4.2 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology

NXP Semiconductors
120
P_der
(%)
80
PSMN4R2-30MLD
N-channel 30 V, 4.2 mΩ logic level MOSFET in LFPAK33 using
NextPowerS3 Technology
03aa16
100
I_D
(A)
80
(1)
60
aaa-008514
40
40
20
0
0
50
100
150
200
T_mb (°C)
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
0
0 25 50 75 100 125 150 175 200
T_mb (°C)
(1) Capped at 70A due to package
Fig. 2. Continuous drain current as a function of
mounting base temperature
10³
I_D
(A)
10²
10
1
Limit R_DSon = V_DS / I_D
DC
aaa-009548
t_p = 10 us
100 us
1 ms
10 ms
100 ms
10^-1
10^-1
1
10
10²
V_DS (V)
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
R_th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
Fig. 4
PSMN4R2-30MLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 August 2015
Min Typ Max Unit
-
2.09 2.32 K/W
© NXP Semiconductors N.V. 2015. All rights reserved
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