PSMN3R9-25MLC Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel 25 V 4.15 m logic level MOSFET in LFPAK33 using NextPower Technology

NXP Semiconductors
PSMN3R9-25MLC
N-channel 25 V 4.15 mΩ logic level MOSFET in LFPAK33 using NextPower Technology
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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10
V_GS
(V)
8
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6
5V
20 V
4
V_DS= 12.5 V
2
0
0
5
10
15
20 Q_G 25
(nC)
Fig 12. Gate charge waveform definitions
10⁴
C
(pF)
10³
10²
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C_iss
C_oss
C_rss
10
10^-1
1
10
10²
V_DS (V)
Fig 13. Gate-source voltage as a function of gate
charge; typical values
80
I_S
(A)
60
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40
20
0
0
T_j = 150°C
0.3
0.6
T_j = 25 °C
0.9
1.2
V_SD(V)
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 15. Source current as a function of source-drain
voltage; typical values
PSMN3R9-25MLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 15 June 2012
© NXP B.V. 2012. All rights reserved.
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