PSMN3R9-25MLC Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel 25 V 4.15 m logic level MOSFET in LFPAK33 using NextPower Technology

PSMN3R9-25MLC
N-channel 25 V 4.15 mΩ logic level MOSFET in LFPAK33
using NextPower Technology
Rev. 4 — 15 June 2012
Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
 Low parasitic inductance and
resistance
 Optimised for 4.5V Gate drive utilising
NextPower Superjunction technology
 Ultra low QG, QGD, & QOSS for high
system efficiencies at low and high
loads
1.3 Applications
 DC-to-DC converters
 Load switching
 Synchronous buck regulator
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
V_DS
drain-source voltage
I_D
drain current
P_tot
total power dissipation
T_j
junction temperature
Static characteristics
R_DSon
drain-source on-state
resistance
Dynamic characteristics
Q_GD
gate-drain charge
Q_G(tot)
total gate charge
Conditions
T_j = 25°C
T_mb = 25 °C; V_GS = 10 V; see Figure 1
T_mb = 25 °C; see Figure 2
V_GS = 4.5 V; I_D = 25 A; T_j = 25 °C;
see Figure 10
V_GS = 10 V; I_D = 25 A; T_j = 25 °C;
see Figure 10
V_GS = 4.5 V; I_D = 25 A; V_DS = 12.5 V;
see Figure 12; see Figure 13
V_GS = 4.5 V; I_D = 25 A; V_DS = 12.5 V;
see Figure 12; see Figure 13
[1] Continuous current is limited by package.
Min Typ Max Unit
-
-
25 V
[1] _-
-
70 A
-
-
69 W
-55 -
175 °C
-
4.85 5.55 mΩ
-
3.65 4.15 mΩ
-
2.3 -
nC
-
9.7 -
nC