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| PSMN3R9-25MLC Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel 25 V 4.15 m logic level MOSFET in LFPAK33 using NextPower Technology | |||
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NXP Semiconductors
PSMN3R9-25MLC
N-channel 25 V 4.15 m⦠logic level MOSFET in LFPAK33 using NextPower Technology
103
ID
(A)
102
10
1
10-1
10-1
Limit RDSon = VDS / ID
1
DC
10
003aaj779
tp =10 μs
100 μs
1 ms
10 ms
100 ms
102
VDS (V)
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
Conditions
see Figure 5
Min Typ Max Unit
-
1.95 2.18 K/W
10
Zth(j-mb)
(K/W)
003aaj780
1 δ = 0.5
0.2
0.1
10-1 0.05
P
δ=
tp
T
0.02
single shot
10-2
tp
t
T
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN3R9-25MLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 â 15 June 2012
© NXP B.V. 2012. All rights reserved.
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