PSMN2R8-80BS Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel 80 V, 3 m standard level FET in D2PAK

NXP Semiconductors
PSMN2R8-80BS
N-channel 80 V, 3 mΩ standard level FET in D2PAK
10
R_DSon
(mΩ)
8
V_GS (V) = 5
6
003aad432
5.5
4
6.5
6
2
20
8 10
0
0
20
40
60
80 _{ID (A)} 100
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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Fig 13. Drain-source on-state resistance as a function Fig 14. Gate charge waveform definitions
of drain current; typical values
10
V_GS
(V)
7.5
40V 64V
V_DS= 16V
003aaf609
10⁵
C
(pF)
10⁴
003aaf610
C_iss
5
10³
C_oss
C_rss
2.5
10²
0
0
40
80
120 _{QG (nC)160}
10
10^-1
1
10 _VDS(V) 10²
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN2R8-80BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 February 2012
© NXP B.V. 2012. All rights reserved.
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