PSMN2R8-80BS Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel 80 V, 3 m standard level FET in D2PAK

NXP Semiconductors
PSMN2R8-80BS
N-channel 80 V, 3 mΩ standard level FET in D2PAK
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
t_rr
reverse recovery time I_S = 25 A; dI_S/dt = 100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 20 V
Min Typ Max Unit
-
0.8 1.2 V
-
63 -
ns
-
121 -
nC
250
g_fs
(S)
200
150
100
50
0
0
003aaf602
20
40
60
80
I_D (A)
003aaf603
75
I_D
(A)
50
25
0
0
T_j = 175 °C
T_j = 25 °C
2
4 _VGS(V) 6
Fig 5. Forward transconductance as a function of
drain current; typical values
16000
C
(pF)
12000
003aaf606
C_iss
8000
C_rss
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
160
I_D
(A)
120
6
5.5 5
8
10
003aad685
4.5
80
4000
0
10^-1
1
10 _VGS(V) 10²
40
V_GS (V) = 4
0
0
0.5
1
1.5
2
V_DS (V)
Fig 7. Input and reverse transfer capacitances as a
Fig 8. Output characteristics: drain current as a
function of gate-source voltage; typical values
function of drain-source voltage; typical values
PSMN2R8-80BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 February 2012
© NXP B.V. 2012. All rights reserved.
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