PSMN2R4-30YLD_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology

NXP Semiconductors
PSMN2R4-30YLD
N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
200
I_D
(A)
150
aaa-008278
25
R_DSon
(mΩ)
20
aaa-008279
3V
15
100
10
50
150°C T_j = 25°C
5
3.5 V
4.5 V
0
0
0.8
1.6
2.4
3.2
4
V_GS (V)
V_GS = 10 V
0
0 10 20 30 40 50 60 70 80
I_D (A)
Fig. 9. Transfer characteristics; drain current as a
Fig. 10. Drain-source on-state resistance as a function
function of gate-source voltage; typical values
of drain current; typical values
2
a
1.6
003aal037
10 V
1.2
0.8
V_GS = 4.5 V
0.4
0
-60 -30 0 30 60 90 120 150 180
T_j (°C)
Fig. 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig. 12. Gate charge waveform definitions
PSMN2R4-30YLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 February 2014
© NXP N.V. 2014. All rights reserved
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