PSMN2R4-30YLD_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology

NXP Semiconductors
PSMN2R4-30YLD
N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
Symbol
Parameter
Conditions
Q_oss
output charge
V_GS = 0 V; V_DS = 15 V; f = 1 MHz;
T_j = 25 °C
Source-drain diode
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C; Fig. 15
t_rr
reverse recovery time I_S 25 A; dI_S/dt = -100 A/s; V_GS = 0 V;
Q_r
recovered charge
V_DS = 15 V; Fig. 15
[1]
t_a
reverse recovery rise
time
t_b
reverse recovery fall
time
S
softness factor
Min Typ Max Unit
-
24.8 -
nC
-
0.81 1.2 V
-
30.3 -
ns
-
20
-
nC
-
15
-
ns
-
15
-
ns
-
1
-
[1] Includes capacitive recovery
80
I_D
(A)
60
40
10 V
4.5 V
3.5 V
20
aaa-008276
V_GS = 3 V
2.8 V
2.6 V
20
R_DSon
(mΩ)
16
12
8
4
aaa-008277
0
0
0.5
1
1.5
2
2.5
V_DS (V)
0
0 2 4 6 8 10 12 14 16
V_GS (V)
Fig. 7. Output characteristics; drain current as a
Fig. 8. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
PSMN2R4-30YLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 February 2014
© NXP N.V. 2014. All rights reserved
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