PSMN2R4-30YLD_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology

PSMN2R4-30YLD
N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56
using NextPowerS3 Technology
7 February 2014
Product data sheet
1. General description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.
NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers
high efficiency, low spiking performance usually associated with MOSFETs with an
integrated Schottky or Schottky-like diode but without problematic high leakage current.
NextPowerS3 is particularly suited to high efficiency applications at high switching
frequencies.
2. Features and benefits
• Ultra low Q_G, Q_GD and Q_OSS for high system efficiency, especially at higher switching
frequencies
• Superfast switching with soft-recovery; s-factor > 1
• Low spiking and ringing for low EMI designs
• Unique “SchottkyPlus” technology; Schottky-like performance with < 1µA leakage at
25 °C
• Optimised for 4.5 V gate drive
• Low parasitic inductance and resistance
• High reliability clip bonded and solder die attach Power SO8 package; no glue, no
wire bonds, qualified to 175 °C
• Wave solderable; exposed leads for optimal visual solder inspection
3. Applications
• On-board DC-to-DC solutions for server and telecommunications
• Secondary-side synchronous rectification in telecommunication applications
• Voltage regulator modules (VRM)
• Point-of-Load (POL) modules
• Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
• Brushed and brushless motor control
4. Quick reference data
Table 1.
Symbol
V_DS
I_D
P_tot
Quick reference data
Parameter
Conditions
drain-source voltage 25 °C ≤ T_j ≤ 175 °C
drain current
T_mb = 25 °C; V_GS = 10 V; Fig. 2
total power dissipation T_mb = 25 °C; Fig. 1
Min Typ Max Unit
-
-
30
V
[1]
-
-
100 A
-
-
106 W
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