PSMN2R2-40BS Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel 40 V 2.2 m standard level MOSFET in D2PAK

NXP Semiconductors
PSMN2R2-40BS
N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK
250
I_D
(A)
200
150
100
50
0
0
003aad118
175 °C
25 °C
1.5
3
4.5
6
V_GS (V)
12000
C
(pf)
10000
8000
6000
4000
2000
10^-1
003aad122
C_iss
C_rss
1
10
V_GS (V)
Fig 7. Transfer characteristics: drain current as a
Fig 8. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
function of gate-source voltage; typical values
250
g_fs
(S)
200
150
100
50
003aad123
30
R_DS(on)
(mΩ)
25
20
15
10
5
003aad124
0
0
50
100
150
200
I_D (A)
0
0
5
10
15
20
V_GS (V)
Fig 9. Forward transconductance as a function of
drain current; typical values
Fig 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PSMN2R2-40BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 March 2012
© NXP B.V. 2012. All rights reserved.
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