PSMN2R2-40BS Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel 40 V 2.2 m standard level MOSFET in D2PAK

NXP Semiconductors
PSMN2R2-40BS
N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK
Table 7. Characteristics …continued
Tested to JEDEC standards where applicable.
Symbol Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage
I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
t_rr
reverse recovery time
Q_r
recovered charge
I_S = 25 A; dI_S/dt = -100 A/µs;
V_GS = 0 V; V_DS = 20 V
I_S = 25 A; dI_S/dt = -100 A/µs;
V_GS = 0 V; V_DS = 20 V; T_j = 25 °C
Min Typ Max Unit
-
0.85 1.2 V
-
53.7 -
ns
-
80.75 -
nC
300
I_D ²⁰
6
(A) 10
250
8
200
150
100
50
0
0
1
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V_GS (V) = 5.5
5
4.5
2
3
4
V_DS (V)
6
R_DSon
(mΩ)
5
V_GS (V) = 5
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5.5
4
3
6
2
8
20
10
1
0
50 100 150 200 250 300
I_D (A)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of drain current; typical values
PSMN2R2-40BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 March 2012
© NXP B.V. 2012. All rights reserved.
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