PSMN0R9-30YLD_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel 30 V, 0.87 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology

NXP Semiconductors
PSMN0R9-30YLD
N-channel 30 V, 0.87 mΩ logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
200
I_D
(A)
160
aaa-011701
12
R_DSon
(mΩ)
9
2.4 V
2.6 V
aaa-011702
2.8 V
120
6
80
40
150°C
T_j = 25°C
0
0 0.5 1 1.5 2 2.5 3 3.5
V_GS (V)
3
3V
4.5 V
0
V_GS = 10 V
0 25 50 75 100 125 150 175 200
I_D (A)
Fig. 9. Transfer characteristics; drain current as a
Fig. 10. Drain-source on-state resistance as a function
function of gate-source voltage; typical values
of drain current; typical values
2
a
1.6
003aal037
10 V
1.2
V_GS = 4.5 V
0.8
0.4
0
-60 -30 0 30 60 90 120 150 180
T_j (°C)
Fig. 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig. 12. Gate charge waveform definitions
PSMN0R9-30YLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 November 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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