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| PSMN0R9-30YLD_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel 30 V, 0.87 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | |||
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NXP Semiconductors
7. Marking
Table 4. Marking codes
Type number
PSMN0R9-30YLD
PSMN0R9-30YLD
N-channel 30 V, 0.87 mΩ logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
Marking code
0D930L
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
drain-source voltage
25 °C ⤠Tj ⤠175 °C
VDGR
drain-gate voltage
25 °C ⤠Tj ⤠175 °C; RGS = 20 kΩ
VGS
gate-source voltage
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 2
[1]
VGS = 10 V; Tmb = 100 °C; Fig. 2
[1]
IDM
peak drain current
pulsed; tp ⤠10 µs; Tmb = 25 °C; Fig. 3
Tstg
storage temperature
Tj
junction temperature
Tsld(M)
peak soldering temperature
VESD
electrostatic discharge voltage HBM
Source-drain diode
IS
source current
Tmb = 25 °C
[1]
ISM
peak source current
pulsed; tp ⤠10 µs; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 25 A; [2]
Vsup ⤠30 V; RGS = 50 Ω; unclamped;
tp = 6.1 ms
[1] Continuous current is limited by package.
[2] Protected by 100% test
Min Max Unit
-
30
V
-
30
V
-20 20
V
-
349 W
-
100 A
-
100 A
-
1888 A
-55 150 °C
-55 150 °C
-
260 °C
2000 -
V
-
100 A
-
1888 A
-
2987 mJ
PSMN0R9-30YLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 November 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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