PSMN034-100BS_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel 100 V 34.5 mΩ standard level MOSFET in D2PAK

NXP Semiconductors
PSMN034-100BS
N-channel 100 V 34.5 mΩ standard level MOSFET in D2PAK.
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
10^−6
0
03aa35
min typ max
2
4
6
V_GS (V)
3.2
a
2.4
003aad774
1.6
0.8
0
-60
0
60
120
180
T_j (°C)
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
140
R_DSon
(mΩ)
120
V_GS (V) = 4.5
4.7
003aae108
100
80
60
5.0
40
5.5
6.5
20
0
10.0
10
20
30
40
I_D (A)
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig 13. Drain-source on-state resistance as a function Fig 14. Gate charge waveform definitions
of drain current; typical values
PSMN034-100BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 2 March 2012
© NXP B.V. 2012. All rights reserved.
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