PSMN034-100BS_15 Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel 100 V 34.5 mΩ standard level MOSFET in D2PAK

NXP Semiconductors
PSMN034-100BS
N-channel 100 V 34.5 mΩ standard level MOSFET in D2PAK.
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
t_d(on)
turn-on delay time
t_r
rise time
t_d(off)
turn-off delay time
t_f
fall time
Source-drain diode
V_DS = 50 V; R_L = 3.3 Ω; V_GS = 10 V;
R_G(ext) = 4.7 Ω; T_j = 25 °C
V_SD
source-drain voltage I_S = 15 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
t_rr
reverse recovery time I_S = 5 A; dI_S/dt = 100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 50 V
Min Typ Max Unit
-
12 -
ns
-
10 -
ns
-
28 -
ns
-
9
-
ns
-
0.85 1.2 V
-
38 -
ns
-
59 -
nC
50
g _fs
(S)
40
30
20
10
0
0
003aae110
10
20
30
40
ID (A)
30
I
D
(A)
25
003aae107
20
15
10
5
T_j = 175 °C
T_j = 25 °C
0
0
1
2
3
4 _VGS(V) 5
Fig 5. Forward transconductance as a function of
drain current; typical values
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
PSMN034-100BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 2 March 2012
© NXP B.V. 2012. All rights reserved.
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