PSMN013-100YSE_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel 100 V 13 mΩ standard level MOSFET in LFPAK56

NXP Semiconductors
PSMN013-100YSE
N-channel 100 V 13 mΩ standard level MOSFET in LFPAK56
40
R_DSon
5V
30
5.5 V 6 V
003aak682
6.5 V
20
7V
10
20 V 10 V 8 V
3
a
2.4
1.8
1.2
0.6
003aak756
0
0 10 20 30 40 50 60 70 80
I_D (A)
Fig. 12. Drain-source on-state resistance as a function
of drain current; typical values
0
-60 -30 0 30 60 90 120 150 180
T_j (°C)
Fig. 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig. 14. Gate charge waveform definitions
10
V_GS
(V)
8
6
4
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V_GS = 20 V
50 V
80 V
2
0
0
20
40
60
80
100
Q_G (nC)
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
PSMN013-100YSE
Product data sheet
All information provided in this document is subject to legal disclaimers.
18 December 2012
© NXP B.V. 2012. All rights reserved
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