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PSMN013-100YSE_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel 100 V 13 mΩ standard level MOSFET in LFPAK56
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NXP Semiconductors
PSMN013-100YSE
N-channel 100 V 13 mΩ standard level MOSFET in LFPAK56
Symbol
Parameter
Conditions
Dynamic characteristics
QG(tot)
total gate charge
ID = 20 A; VDS = 50 V; VGS = 10 V;
Fig. 14; Fig. 15
ID = 0 A; VDS = 0 V; VGS = 10 V
QGS
gate-source charge
ID = 20 A; VDS = 50 V; VGS = 10 V;
QGD
gate-drain charge
Fig. 14; Fig. 15
VGS(pl)
gate-source plateau
voltage
ID = 20 A; VDS = 50 V; Fig. 14; Fig. 15
Ciss
input capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; Fig. 16
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 50 V; RL = 2.9 Ω; VGS = 10 V;
RG(ext) = 5 Ω
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage IS = 20 A; VGS = 0 V; Tj = 25 °C; Fig. 17
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 50 V
Min Typ Max Unit
-
75
-
nC
-
60
-
nC
-
16
-
nC
-
26
-
nC
-
4.7 -
V
-
3775 -
pF
-
265 -
pF
-
192 -
pF
-
16
-
ns
-
23
-
ns
-
42
-
ns
-
21
-
ns
-
0.82 1.2 V
-
61
-
ns
-
146 -
nC
100
ID
(A)
80
8V
10 V
20 V
003aak678
7V
6.5 V
40
RDSon
30
003aak679
60
6V
20
40
VGS = 5.5 V
10
20
5V
4.5 V
0
0
0.5
1
1.5
2
2.5
3
VDS (V)
0
0
4
8
12
16
20
VGS (V)
Fig. 6. Output characteristics; drain current as a
Fig. 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
PSMN013-100YSE
Product data sheet
All information provided in this document is subject to legal disclaimers.
18 December 2012
© NXP B.V. 2012. All rights reserved
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