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| PSMN013-100YSE_15 Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel 100 V 13 mΩ standard level MOSFET in LFPAK56 | |||
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NXP Semiconductors
PSMN013-100YSE
N-channel 100 V 13 mΩ standard level MOSFET in LFPAK56
1
Zth(j-mb)
(K/W)
δ = 0.5
10-1 0.2
0.1
0.05
0.02
10-2
single shot
003aak677
P
tp
δ= T
10-3
10-6
10-5
10-4
10-3
10-2
tp
t
T
10-1
1
tp (s)
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
voltage
Fig. 10; Fig. 11
VGSth
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 175 °C;
voltage
Fig. 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 11
IDSS
drain leakage current VDS = 100 V; VGS = 0 V; Tj = 25 °C
VDS = 100 V; VGS = 0 V; Tj = 175 °C
IGSS
gate leakage current VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state VGS = 10 V; ID = 20 A; Tj = 25 °C;
resistance
Fig. 12
VGS = 10 V; ID = 20 A; Tj = 100 °C;
Fig. 12; Fig. 13
VGS = 10 V; ID = 20 A; Tj = 175 °C;
Fig. 12; Fig. 13
RG
gate resistance
f = 1 MHz
Min Typ Max Unit
100 -
-
V
90
-
-
V
2
3
4
V
1
-
-
V
-
-
4.6 V
-
0.03 2
µA
-
-
500 µA
-
10
100 nA
-
10
100 nA
-
11
13
mΩ
-
-
23
mΩ
-
-
36
mΩ
0.33 0.66 1.32 Ω
PSMN013-100YSE
Product data sheet
All information provided in this document is subject to legal disclaimers.
18 December 2012
© NXP B.V. 2012. All rights reserved
5 / 13
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