PMPB48EP_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – 30 V, single P-channel Trench MOSFET

NXP Semiconductors
PMPB48EP
30 V, single P-channel Trench MOSFET
-4
V_GS(th)
(V)
-3
-2
-1
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max
typ
min
10⁴
C
(pF)
10³
10²
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C_iss
C_oss
C_rss
0
-60
0
60
I_D = -0.25 mA; V_DS = V_GS
120
180
T_j (°C)
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
-10
V_GS
(V)
-8
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10
-10^-1
-1
f = 1 MHz; V_GS = 0 V
-10
-10²
V_DS (V)
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
V_DS
I_D
-6
-4
-2
0
0
5
10
15
20
Q_G (nC)
I_D = -3.5 A; V_DS = -15 V; T_amb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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Fig. 15. Gate charge waveform definitions
PMPB48EP
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 September 2012
© NXP B.V. 2012. All rights reserved
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