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PMPB48EP_15 Datasheet, PDF (6/14 Pages) NXP Semiconductors – 30 V, single P-channel Trench MOSFET
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NXP Semiconductors
PMPB48EP
30 V, single P-channel Trench MOSFET
Symbol
RDSon
Parameter
drain-source on-state
resistance
gfs
forward
transconductance
RG
gate resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage
Conditions
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; ID = -4.7 A; Tj = 25 °C
VGS = -10 V; ID = -4.7 A; Tj = 150 °C
VGS = -4.5 V; ID = -3.9 A; Tj = 25 °C
VDS = -10 V; ID = -4.7 A; Tj = 25 °C
f = 1 MHz
VDS = -15 V; ID = -4.7 A; VGS = -10 V;
Tj = 25 °C
VDS = -15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
VDS = -15 V; ID = -4.7 A; VGS = -10 V;
RG(ext) = 6 Ω; Tj = 25 °C
IS = -1.8 A; VGS = 0 V; Tj = 25 °C
Min Typ Max Unit
-
-
100 nA
-
40
50
mΩ
-
60
75
mΩ
-
55
76
mΩ
-
15
-
S
-
6
-
Ω
-
17
26
nC
-
2.5 -
nC
-
3.2 -
nC
-
860 -
pF
-
105 -
pF
-
87
-
pF
-
7.4 -
ns
-
17.5 -
ns
-
27
-
ns
-
10.4 -
ns
-
-0.8 -1.2 V
-20
ID
(A)
-16
-10 V
-12
-4.5 V
017aaa773
-4 V
VGS = -3.6 V
-10-2
ID
(A)
-10-3
-10-4
017aaa774
min typ
max
-8
-3.3 V
-4
-3 V
-10-5
0
0
-1
Tj = 25 °C
-2.7 V
-2.5 V
-2
-3
-4
VDS (V)
-10-6
0
-1
-2
Tj = 25 °C; VDS = -5 V
-3
-4
VGS (V)
Fig. 6. Output characteristics: drain current as a
Fig. 7. Sub-threshold drain current as a function of
function of drain-source voltage; typical values
gate-source voltage
PMPB48EP
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 September 2012
© NXP B.V. 2012. All rights reserved
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