PMPB48EP_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – 30 V, single P-channel Trench MOSFET

NXP Semiconductors
PMPB48EP
30 V, single P-channel Trench MOSFET
0.18
-3.2 V
R_DSon
(Ω)
-3.3 V
-3.4 V
-3.5 V
-3.6 V
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-4 V
250
R_DSon
(mΩ)
200
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0.12
150
0.06
-4.5 V
100
V_GS = -10 V
50
T_j = 150 °C
T_j = 25 °C
0
0
-5
T_j = 25 °C
-10
-15
-20
-25
I_D (A)
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
-24
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0
0
-4
I_D = -3 A
-8
-12
V_GS (V)
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
1.8
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I_D
a
(A)
-16
1.4
-8
1.0
T_j = 150 °C
T_j = 25 °C
0
0
-1
-2
-3
-4
-5
V_GS (V)
V_DS > I_D × R_DSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0.6
-60
0
60
120
180
T_j (°C)
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
PMPB48EP
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 September 2012
© NXP B.V. 2012. All rights reserved
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