PHP160NQ08T Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
PHP/PHB160NQ08T
N-channel TrenchMOS™ standard level FET
75
VGS = 0 V
IS
(A)
50
03ap71
10
VGS
(V)
8
ID = 25 A
Tj = 25 °C
14 V
6
03ap73
VDD = 60 V
4
25
175 °C
Tj = 25 °C
2
0
0
0.3
0.6
0.9
1.2
VSD (V)
0
0
25
50
75 _{QG (nC)} 100
T_j = 25 °C and 175 °C; V_GS = 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I_D = 25 A; V_DD = 14 V and 60 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
9397 750 12719
Product data
Rev. 01 — 28 January 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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