PHP160NQ08T Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
PHP/PHB160NQ08T
N-channel TrenchMOS™ standard level FET
240
10 V
6V
Tj = 25 °C
ID
(A)
160
03ap68
5.5 V
75
VDS > ID x RDSon
ID
(A)
50
03ap70
80
5V
VGS = 4.5 V
0
0
1
2
3 _{VDS (V)} 4
25
0
0
Tj = 175 °C
25 °C
2
4
6
VGS (V)
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 175 °C; V_DS > I_D x R_DSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
20
03ap69
2.4
5V
RDSon Tj = 25 °C
VGS = 5.5 V
a
(mΩ)
15
1.6
10
6V
0.8
10 V
5
03nb25
0
0
80
160
240
ID (A)
0
-60
0
60
120 _{Tj (°C)} 180
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = -_R---_D----^R_S---_oD---_n-^S-₍--^o2--₅-ⁿ--_°--_C---₎
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 12719
Product data
Rev. 01 — 28 January 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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