PHP160NQ08T Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
PHP/PHB160NQ08T
N-channel TrenchMOS™ standard level FET
6. Characteristics
Table 5: Characteristics
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V_(BR)DSS drain-source breakdown voltage
I_D = 250 µA; V_GS = 0 V
T_j = 25 °C
T_j = −55 °C
V_GS(th) gate-source threshold voltage
I_D = 1 mA; V_DS = V_GS; Figure 9
T_j = 25 °C
T_j = 175 °C
T_j = −55 °C
I_DSS
drain-source leakage current
I_GSS
gate-source leakage current
V_DS = 75 V; V_GS = 0 V
T_j = 25 °C
T_j = 175 °C
V_GS = ±20 V; V_DS = 0 V
R_DSon drain-source on-state resistance
V_GS = 10 V; I_D = 25 A; Figure 7 and 8
T_j = 25 °C
T_j = 175 °C
Dynamic characteristics
Q_g(tot)
Q_gs
total gate charge
gate-source charge
I_D = 25 A; V_DD = 60 V; V_GS = 10 V;
Figure 13
Q_gd
gate-drain (Miller) charge
C_iss
input capacitance
C_oss
output capacitance
V_GS = 0 V; V_DS = 25 V; f = 1 MHz;
Figure 11
C_rss
t_d(on)
t_r
reverse transfer capacitance
turn-on delay time
rise time
V_DD = 30 V; R_G = 1.2 Ω;
V_GS = 10 V; R_G = 10 Ω
t_d(off)
turn-off delay time
t_f
fall time
Source-drain diode
V_SD
source-drain (diode forward) voltage I_S = 25 A; V_GS = 0 V; Figure 12
t_rr
reverse recovery time
I_S = 20 A; dI_S/dt = −100 A/µs; V_GS = 0 V
Q_r
recovered charge
Min Typ Max Unit
75 -
70 -
2
3
1
-
-
-
-
V
-
V
V
4
V
-
V
4.4 V
-
-
1
µA
-
-
500 µA
-
2
100 nA
-
4.8 5.6 mΩ
-
10.1 11.8 mΩ
-
91 -
nC
-
19 -
nC
-
28 -
nC
-
5585 -
pF
-
845 -
pF
-
263 -
pF
-
36 -
ns
-
56 -
ns
-
128 -
ns
-
48 -
ns
-
0.81 1.2 V
-
86 -
ns
-
253 -
nC
9397 750 12719
Product data
Rev. 01 — 28 January 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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