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PBSS4021SN Datasheet, PDF (8/15 Pages) NXP Semiconductors – 20 V, 7.5 A NPN/NPN low VCEsat (BISS) transistor
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NXP Semiconductors
PBSS4021SN
20 V, 7.5 A NPN/NPN low VCEsat (BISS) transistor
1
VCEsat
(V)
10−1
10−2
006aac242
(2)
(3)
(1)
1
VCEsat
(V)
10−1
(1)
10−2
(2)
006aac243
10−3
10−1
1
10
102 103 104 105
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
103
RCEsat
(Ω)
102
006aac244
10
1
10−1
(1)
(2)
10−2
10−1
1
(3)
10
102
103
104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
10−3
10−1
(3)
1
10
102 103 104 105
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
103
RCEsat
(Ω)
102
006aac245
10
(1)
(2)
1
10−1
(3)
10−2
10−1
1
10
102 103 104 105
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS4021SN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 11 October 2010
© NXP B.V. 2010. All rights reserved.
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