PBSS4021SN Datasheet, PDF (4/15 Pages) NXP Semiconductors – 20 V, 7.5 A NPN/NPN low VCEsat (BISS) transistor

NXP Semiconductors
PBSS4021SN
20 V, 7.5 A NPN/NPN low V_CEsat (BISS) transistor
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Per transistor
R_th(j-a)
thermal resistance from
junction to ambient
R_th(j-sp)
thermal resistance from
junction to solder point
Per device
R_th(j-a)
thermal resistance from
junction to ambient
Conditions
in free air
Min Typ Max Unit
[1] _-
-
170 K/W
[2] _-
-
125 K/W
[3] _-
-
75
K/W
-
-
40
K/W
in free air
[1] _-
-
145 K/W
[2] _-
-
90
K/W
[3] _-
-
55
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².
[3] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.
10³
Z_th(j-a)
(K/W)
10²
10
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aac235
10^−1
10^−5
10^−4
10^−3
10^−2
10^−1
1
10
10²
10³
t_p (s)
Fig 2.
FR4 PCB, standard footprint
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSS4021SN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 11 October 2010
© NXP B.V. 2010. All rights reserved.
4 of 15