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PBSS4021SN Datasheet, PDF (1/15 Pages) NXP Semiconductors – 20 V, 7.5 A NPN/NPN low VCEsat (BISS) transistor | |||
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PBSS4021SN
20 V, 7.5 A NPN/NPN low VCEsat (BISS) transistor
Rev. 2 â 11 October 2010
Product data sheet
1. Product profile
1.1 General description
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8)
medium power Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Type number Package
NXP
PBSS4021SN SOT96-1
Name
SO8
PNP/PNP
complement
PBSS4021SP
NPN/PNP
complement
PBSS4021SPN
1.2 Features and benefits
 Very low collector-emitter saturation voltage VCEsat
 High collector current capability IC and ICM
 High collector current gain (hFE) at high IC
 High efficiency due to less heat generation
 Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
 Loadswitch
 Battery-driven devices
 Power management
 Charging circuits
 Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VCEO collector-emitter voltage open base
-
IC
collector current
-
ICM
peak collector current
single pulse;
-
tp ⤠1 ms
RCEsat collector-emitter
saturation resistance
IC = 5 A; IB = 0.5 A [1] -
-
20
V
-
7.5 A
-
15
A
25
35
mΩ
[1] Pulse test: tp ⤠300 μs; δ ⤠0.02.
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