PBSS304PD Datasheet, PDF (8/15 Pages) NXP Semiconductors – 80 V, 3 A PNP low VCEsat (BISS) transistor

NXP Semiconductors
PBSS304PD
80 V, 3 A PNP low V_CEsat (BISS) transistor
600
h_FE
400
(1)
(2)
200
(3)
006aaa735
−6
I_B = −340 mA
−306
I_C
−272
(A)
−238
−204
−170
−4 _−136
−2
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−102
−68
−34
0
−10^−1
−1
−10
−10²
−10³
−10⁴
I_C (mA)
V_CE = −2 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 6. DC current gain as a function of collector
current; typical values
−1.2
V_BE
(V)
−0.8
(1)
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(2)
−0.4
(3)
0
0
−0.4
−0.8
T_amb = 25 °C
−1.2
−1.6
−2.0
V_CE (V)
Fig 7. Collector current as a function of
collector-emitter voltage; typical values
−1.2
V_BEsat
(V)
−0.8
(1)
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(2)
−0.4
(3)
0
−10^−1
−1
−10
−10²
−10³
−10⁴
I_C (mA)
0
−10^−1
−1
−10
−10²
−10³
−10⁴
I_C (mA)
V_CE = −2 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 8. Base-emitter voltage as a function of collector
current; typical values
I_C/I_B = 20
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 9. Base-emitter saturation voltage as a function
of collector current; typical values
PBSS304PD_2
Product data sheet
Rev. 02 — 24 March 2009
© NXP B.V. 2009. All rights reserved.
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