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PBSS304PD Datasheet, PDF (1/15 Pages) NXP Semiconductors – 80 V, 3 A PNP low VCEsat (BISS) transistor | |||
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PBSS304PD
80 V, 3 A PNP low VCEsat (BISS) transistor
Rev. 02 â 24 March 2009
Product data sheet
1. Product proï¬le
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS304ND.
1.2 Features
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efï¬ciency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I High-voltage DC-to-DC conversion
I High-voltage MOSFET gate driving
I High-voltage motor control
I High-voltage power switches (e.g. motors, fans)
I Thin Film Transistor (TFT) backlight inverter
I Automotive applications
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
RCEsat
collector-emitter
saturation resistance
Conditions
open base
single pulse;
tp ⤠1 ms
IC = â2 A;
IB = â200 mA
Min Typ Max Unit
-
-
â80 V
[1] -
-
â3
A
-
-
â5
A
[2] -
75
100 mâ¦
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Pulse test: tp ⤠300 µs; δ ⤠0.02.
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