PBSS304PD Datasheet, PDF (4/15 Pages) NXP Semiconductors – 80 V, 3 A PNP low VCEsat (BISS) transistor

NXP Semiconductors
PBSS304PD
80 V, 3 A PNP low V_CEsat (BISS) transistor
1600
P_tot
(mW)
1200
(1)
800
(2)
(3)
400
(4)
006aaa270
0
−75
−25
25
75
(1) Ceramic PCB, Al₂O₃, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm²
(3) FR4 PCB, mounting pad for collector 1 cm²
(4) FR4 PCB, standard footprint
Fig 1. Power derating curves
125
175
T_amb (°C)
6. Thermal characteristics
Table 6.
Symbol
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
R_th(j-sp)
thermal resistance from
junction to solder point
Conditions
Min Typ Max Unit
in free air
[1] _-
-
350 K/W
[2] _-
-
208 K/W
[3] _-
-
167 K/W
[4] _-
-
113 K/W
[1][5] _-
-
50
K/W
-
-
45
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm².
[4] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.
[5] Pulse test: t_p ≤ 10 ms; δ ≤ 10 %.
PBSS304PD_2
Product data sheet
Rev. 02 — 24 March 2009
© NXP B.V. 2009. All rights reserved.
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