J210 Datasheet, PDF (8/12 Pages) NXP Semiconductors – N-channel field-effect transistors

Philips Semiconductors
N-channel field-effect transistors
Product specification
J210; J211; J212
10³
handbo_Io_Dk, halfpage
(µA)
10²
MGM289
10
1
10^−1
10^−2
10^−3
10^−4
10^−5
−4
−3
−2
−1 _{VGS (V)} 0
V_DS = 15 V; T_j = 25 °C.
Fig.14 Drain current as a function of gate-source
voltage; typical values.
−10⁵
handbo_IGok, halfpage
(pA)
−10⁴
−10³
−10²
−10
−1
−10^−1
0
4
MGM288
ID = 10 mA
1 mA
0.1 mA
IGSS
8
12
16
20
VDG (V)
T_j = 25 °C.
Fig.15 Gate current as a function of drain-gate
voltage; typical values.
1997 Dec 01
8