J210 Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel field-effect transistors

Philips Semiconductors
N-channel field-effect transistors
Product specification
J210; J211; J212
handbook, h⁸alfpage
ID
(mA)
6
MGM281
4
2
0
−2.5
−2
−1.5
−1
−0.5
0
VGS (V)
J210.
V_DS = 10 V; T_j = 25 °C.
Fig.6 Input characteristics; typical values.
20
handboo_Ik_D, halfpage
(mA)
16
12
8
4
MGM282
VGS = 0 V
−200 mV
−400 mV
−600 mV
−800 mV
−1 V
−1.2 V
−1.4 V
0
0
2
4
6
8
10
VDS (V)
J211.
T_j = 25 °C.
Fig.7 Output characteristics; typical values.
handbook,²h⁰alfpage
ID
(mA)
16
12
8
4
0
−6
−4
MGM283
−2 _{VGS (V)} 0
J211.
V_DS = 10 V; T_j = 25 °C.
Fig.8 Input characteristics; typical values.
1997 Dec 01
handbook,²h⁴alfpage
ID
(mA)
16
8
MGM284
VGS = 0 V
−200 mV
−400 mV
−600 mV
−800 mV
−1 V
−1.2 V
−1.4 V
0
0
2
4
6
8
10
VDS (V)
J212.
T_j = 25 °C.
Fig.9 Output characteristics; typical values.
6