J210 Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel field-effect transistors

Philips Semiconductors
N-channel field-effect transistors
Product specification
J210; J211; J212
40
handbook, halfpage
IDSS
(mA)
30
MGM277
20
10
0
0
−2
−4 _{VGSoff (V)} −6
V_DS = 15 V; T_j = 25 °C.
Fig.2 Drain current as a function of gate-source
cut-off voltage; typical values.
handbook,¹h²alfpage
yfs
(mS)
8
MGM278
4
0
0
−2
−4 _{VGSoff (V)} −6
V_DS = 15 V; T_j = 25 °C.
Fig.3 Common-source transfer admittance as a
function of gate-source cut-off voltage;
typical values.
80
handbook, halfpage
gos
(µS)
60
MGM279
40
20
0
0
−2
−4 _{VGSoff (V)} −6
V_DS = 15 V; T_amb = 25 °C.
Fig.4 Common-source output conductance as a
function of gate-source cut-off voltage;
typical values.
handbook, h⁸alfpage
ID
(mA)
6
4
2
0
0
2
MGM280
VGS = 0 V
−200 mV
−400 mV
−600 mV
−1.4 V
−800 mV
−1 V
−1.2 V
4
6
8
10
VDS (V)
J210.
T_j = 25 °C.
Fig.5 Output characteristics; typical values.
1997 Dec 01
5