BUK7E2R3-40C_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7E2R3-40C
N-channel TrenchMOS standard level FET
300
20
10
I_D
7
(A)
6.5
200
100
0
0
2
V_GS (V) = 6
003aab005
5.5
5
4.5
4
6
8
10
V_DS (V)
6
R_DSon
(mΩ)
5
V_GS (V) = 5.5
4
3
2
1
0
100
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6.5
7
8
10
20
200
300
I_D (A)
Fig 6. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of drain current; typical values
180
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400
003aab010
g_fs
I_D
(A)
(S)
300
120
200
60
0
0
20
40
60 _{ID (A)} 80
100
0
0
T_j = 175 °C
T_j = 25 °C
1
3
4
6 _{VGS (V)} 7
Fig 8. Forward transconductance as a function of
drain current; typical values
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
BUK7E2R3-40C_3
Product data sheet
Rev. 03 — 26 January 2009
© NXP B.V. 2009. All rights reserved.
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