BUK7E2R3-40C_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
300
I_D
(A)
200
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BUK7E2R3-40C
N-channel TrenchMOS standard level FET
120
P_der
(%)
80
03aa16
100
40
(1)
0
0
50
100
150
200
T_mb (°C)
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
10⁴
I_D
(A)
10³
limit R_DSon = V_DS/I_D
10²
(1)
10
1
10^−1
10^−1
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
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DC
10
δ = 10 μs
100 μs
1 ms
10 ms
100 ms
10²
V_DS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7E2R3-40C_3
Product data sheet
Rev. 03 — 26 January 2009
© NXP B.V. 2009. All rights reserved.
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