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BUK7E2R3-40C_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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BUK7E2R3-40C
N-channel TrenchMOS standard level FET
Rev. 03 â 26 January 2009
Product data sheet
1. Product profile
1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using advanced TrenchMOS technology. This product has been designed
and qualified to the appropriate AEC standard for use in high performance automotive
applications.
1.2 Features and benefits
 AEC Q101 compliant
 Avalanche robust
 Suitable for standard level gate drive
 Suitable for thermally demanding
environment up to 175°C rating
1.3 Applications
 12V Motor, lamp and solenoid loads
 High performance automotive power
systems
 High performance Pulse Width
Modulation (PWM) applications
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS
drain-source voltage Tj ⥠25 °C; Tj ⤠175 °C
-
-
40 V
ID
drain current
VGS = 10 V; Tmb = 25 °C; [1] -
-
100 A
see Figure 1; see Figure 3; [2]
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
-
-
333 W
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 12;
see Figure 13
-
1.96 2.3 mâ¦
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
ID = 100 A; Vsup ⤠40 V;
RGS = 50 â¦; VGS = 10 V;
Tj(init) = 25 °C; unclamped
-
-
1.2 J
[1] Refer to document 9397 750 12572 for further information.
[2] Continuous current is limited by package.
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