BUK78150-55A_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
2
a
03nc24
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60 -20 20 60 100 140 180
T_j (°C)
BUK78150-55A
N-channel TrenchMOS standard level FET
350
C
(pF)
300
250
C_iss
C_oss
200
C_rss
150
100
50
0
10^−2
10^−1
1
03nb93
10
10²
V_DS (V)
Fig 13. Normalized drain source on-state resistance
factor as a function of junction temperature
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
60
I_S
(A)
50
03nc23
40
30
T_j = 150 °C
20
T_j = 25 °C
10
0
0.0
0.5
1.0
1.5
2.0
2.5
V_SD (V)
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
BUK78150-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 16 June 2010
© NXP B.V. 2010. All rights reserved.
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