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| BUK78150-55A_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
BUK78150-55A
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Conditions
Tj ⥠25 °C; Tj ⤠150 °C
RGS = 20 kâ¦
Tsp = 25 °C; VGS = 10 V; see Figure 1;
see Figure 3
Tsp = 100 °C; VGS = 10 V; see Figure 1
IDM
peak drain current
Tsp = 25 °C; tp ⤠10 µs; pulsed;
see Figure 3
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
Tsp = 25 °C; see Figure 2
IS
source current
ISM
peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Tsp = 25 °C
tp ⤠10 µs; pulsed; Tsp = 25 °C
ID = 5 A; Vsup ⤠55 V; RGS = 50 â¦;
VGS = 10 V; Tj(init) = 25 °C; unclamped
Min Typ Max Unit
-
-
55 V
-
-
55 V
-20 -
20 V
-
-
5.5 A
-
-
3.8 A
-
-
22 A
-
-
-55 -
-55 -
8
W
150 °C
150 °C
-
-
5.5 A
-
-
22 A
-
-
25 mJ
120
Ider
(%)
80
03aa25
120
Pder
(%)
80
03aa17
40
40
0
0
50
100
150
200
Tsp (°C)
0
0
50
100
150
200
Tsp (°C)
Fig 1. Normalized continuous drain current as a
function of solder point temperature
Fig 2. Normalized total power dissipation as a
function of solder point temperature
BUK78150-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 â 16 June 2010
© NXP B.V. 2010. All rights reserved.
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