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BUK78150-55A_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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BUK78150-55A
N-channel TrenchMOS standard level FET
Rev. 02 â 16 June 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
ï® Low conduction losses due to low
on-state resistance
ï® Q101 compliant
ï® Suitable for standard level gate drive
sources
1.3 Applications
ï® 12 V and 24 V loads
ï® Automotive and general purpose
power switching
ï® Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj ⥠25 °C; Tj ⤠150 °C
voltage
ID
drain current
VGS = 10 V; Tsp = 25 °C;
see Figure 1; see Figure 3
Ptot
total power
Tsp = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 5 A;
Tj = 150 °C;
see Figure 12; see Figure 13
VGS = 10 V; ID = 5 A;
Tj = 25 °C;
see Figure 12; see Figure 13
Avalanche ruggedness
EDS(AL)S
non-repetitive
ID = 5 A; Vsup ⤠55 V;
drain-source
RGS = 50 â¦; VGS = 10 V;
avalanche energy Tj(init) = 25 °C; unclamped
Min Typ Max Unit
-
-
55 V
-
-
5.5 A
-
-
8
W
-
-
278 mâ¦
-
128 150 mâ¦
-
-
25 mJ
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