BUK7623-75A_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
2.4
a
1.6
03nb25
0.8
0
−60
0
60
120
180
T_j (°C)
BUK7623-75A
N-channel TrenchMOS standard level FET
3000
C
(pF)
2000
C_iss
03nb08
1000
C_oss
C_rss
0
10^−2
10^−1
1
10
10²
V_DS (V)
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
80
I_S
(A)
60
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
03nb01
40
20
0
0
T_j = 175 °C
T_j = 25 °C
0.4
0.8
1.2
V_SD (V)
Fig 15. Reverse diode current; typical values
BUK7623-75A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 2 February 2011
© NXP B.V. 2011. All rights reserved.
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