BUK7623-75A_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7623-75A
N-channel TrenchMOS standard level FET
200
I_D
(A)
160
120
80
40
03nb06
V_GS (V) = 20
10
9
8
7
6
5
0
0
2
4
6
8
10
V_DS (V)
28
R_DSon
(mΩ)
24
20
16
12
5
03nb05
10
15
20
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
10^−1
I_D
(A)
10^−2
10^−3
10^−4
03aa35
min typ max
40
g_fs
(S)
30
20
03nb03
10
10^−5
10^−6
0
2
4
6
V_GS (V)
0
0
20
40
60
80
I_D (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK7623-75A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 2 February 2011
© NXP B.V. 2011. All rights reserved.
6 of 13