BUK7623-75A_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7623-75A
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T_j ≥ 25 °C; T_j ≤ 175 °C
R_GS = 20 kΩ
T_mb = 25 °C; V_GS = 10 V;
see Figure 1; see Figure 3
I_DM
peak drain current
T_mb = 100 °C; V_GS = 10 V; see Figure 1
T_mb = 25 °C; pulsed; t_p ≤ 10 µs;
see Figure 3
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
T_mb = 25 °C; see Figure 2
I_S
source current
I_SM
peak source current
Avalanche ruggedness
T_mb = 25 °C
pulsed; t_p ≤ 10 µs; T_mb = 25 °C
E_DS(AL)S
non-repetitive drain-source
avalanche energy
I_D = 49 A; V_sup ≤ 75 V; R_GS = 50 Ω;
V_GS = 10 V; T_j(init) = 25 °C; unclamped
120
I_der
(%)
80
03aa24
120
P_der
(%)
80
Min Max Unit
-
75 V
-
75 V
-20 20 V
-
53 A
-
37 A
-
213 A
-
138 W
-55 175 °C
-55 175 °C
-
53 A
-
213 A
-
120 mJ
03na19
40
40
0
0
50
100
150
200
T_mb (°C)
0
0
50
100
150
200
T_mb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
BUK7623-75A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 2 February 2011
© NXP B.V. 2011. All rights reserved.
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