BUK7560-100A Datasheet, PDF (8/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7560-100A; BUK7660-100A
TrenchMOS™ standard level FET
50
03nc99
10
03nc97
ID
VGS
(A)
(V)
40
8
30
6
VDD= 14 V
VDD= 80 V
20
4
10
0
0
Tj = 175 ^oC
Tj = 25 ^oC
2
4
6 _{VGS (V)} 8
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
2
0
0
10
20
30 _{QG (nC)} 40
T_j = 25 °C; I_D = 10 A
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
60
03nc96
IS
(A)
Tj = 175 ^oC
Tj = 25 ^oC
40
20
0
0.0
0.5
1.0 _{VSD (V)} 1.5
V_GS = 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
9397 750 07807
Product specification
Rev. 01 — 22 February 2001
© Philips Electronics N.V. 2001. All rights reserved.
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