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BUK7560-100A Datasheet, PDF (7/15 Pages) NXP Semiconductors – TrenchMOS standard level FET
Philips Semiconductors
BUK7560-100A; BUK7660-100A
TrenchMOS™ standard level FET
03aa32
5
4.5
VGS(th)
(V) 4
3.5
max.
3
typ.
2.5
2
min
1.5
1
0.5
0
-60 -20
20
60 100 140 180
Tj (oC)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
10-1
ID
(A) 10-2
03aa35
10-3
10-4
min
typ
max
10-5
10-6
0
1
2
3
4
5
VGS (V)
Tj = 25 °C; VDS = VGS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
20
03nc98
gfs
(S)
15
10
5
0
0
10
20
30
40 ID (A) 50
Tj = 25 °C; VDS = 25 V
Fig 11. Forward transconductance as a function of
drain current; typical values.
2500
C (pF)
2000
03nd03
1500
1000
Ciss
500
0
0.01
0.1
1
Coss
Crss
10 VDS (V) 100
VGS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 07807
Product specification
Rev. 01 — 22 February 2001
© Philips Electronics N.V. 2001. All rights reserved.
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