BUK7275-100A Datasheet, PDF (8/13 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7275-100A
TrenchMOS™ standard level FET
35
ID
(A)
30
03nb29
25
20
15
Tj = 175 ^O C
10
Tj = 25 ^O C
5
0
0
2
4
6 _{VGS (V)} 8
V_DS = 25 V
Fig 13. Transfer characteristics; typical values.
10
VGS
(V) ₉
8
7
6
5
4
3
2
1
0
0
03nb27
VDS= 14 V
VDS= 80 V
10
20 QG (nC) 30
T_j = 25 °C; I_D = 25 A
Fig 14. Turn-on gate charge characteristics; typical
values.
IS ⁴⁵
(A) ₄₀
35
30
25
20
15
10
5
0
0.0 0.2
V_GS = 0 V
Fig 15. Reverse diode current; typical values.
03nb26
Tj = 175 ^O C
Tj = 25 ^OC
0.4 0.6 0.8 1.0 1.2
VSD (V)
9397 750 07645
Product specification
Rev. 01 — 25 October 2000
© Philips Electronics N.V. 2000. All rights reserved.
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