BUK7275-100A Datasheet, PDF (2/13 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7275-100A
TrenchMOS™ standard level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
Conditions
Typ
V_DS
drain-source voltage (DC)
−
I_D
drain current (DC)
T_mb = 25 °C; V_GS = 10 V
−
P_tot
total power dissipation
T_mb = 25 °C
−
T_j
junction temperature
−
R_DSon drain-source on-state resistance V_GS = 10 V; I_D = 13 A
T_j = 25 °C
64
T_j = 175 °C
−
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
operating junction temperature
Source-drain diode
R_GS = 20 kΩ
T_mb = 25 °C; V_GS = 10 V; Figure 2 and 3
T_mb = 100 °C; V_GS = 10 V; Figure 2
T_mb = 25 °C; pulsed; t_p ≤ 10 µs; Figure 3
T_mb = 25 °C; Figure 1
I_DR
reverse drain current (DC)
I_DRM
pulsed reverse drain current
Avalanche ruggedness
T_mb = 25 °C
T_mb = 25 °C; pulsed; t_p ≤ 10 µs
W_DSS non-repetitive avalanche energy
unclamped inductive load; I_D = 14 A;
V_DS ≤ 100 V; V_GS = 10 V; R_GS = 50 Ω;
starting T _j = 25 °C
[1] I_DM is limited by chip, not package.
Min
−
−
−
−
−
[1] −
−
−55
−55
−
−
−
Max Unit
100
V
21.7 A
89
W
175
°C
75
mΩ
187
mΩ
Max Unit
100
V
100
V
±20
V
21.7 A
15.4 A
87
A
89
W
+175 °C
+175 °C
21.7 A
87
A
100
mJ
9397 750 07645
Product specification
Rev. 01 — 25 October 2000
© Philips Electronics N.V. 2000. All rights reserved.
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