BUK7275-100A Datasheet, PDF (3/13 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7275-100A
TrenchMOS™ standard level FET
120
Pder
(%)
100
03aa16
80
60
40
20
0
0 25 50 75 100 125 150 175 200
Tmb (oC)
P_der
=
-------^P----^t--^o--^t-------
P
×
100
%
t o t ( 25 ^°C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
120
Ider
(%)
100
03aa24
80
60
40
20
0
0 25 50 75 100 125 150 175 200
Tmb (oC)
V_GS ≥ 4.5 V
I_der = -_I------^I---^D-------- × 100%
D ( 25 ^°C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
1000
ID
(A)
100
10
P
1
RDSon = VDS/ ID
δ
=
tp
T
D.C.
03nb21
tp = 10 us
100 us
1 ms
10 ms
100 ms
tp
t
T
0.1
1
10
100
VDS (V)
1000
T_mb = 25 °C; I_DM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07645
Product specification
Rev. 01 — 25 October 2000
© Philips Electronics N.V. 2000. All rights reserved.
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