BUK7237-55A Datasheet, PDF (8/13 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7237-55A
TrenchMOS™ standard level FET
50
03nb79
ID
(A)
40
30
20
10
0
0
Tj = 175 ^OC
2
4
Tj = 25 ^OC
6
8
10
VGS (V)
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
10
VGS
(V) 9
8
VDD= 14 V
7
6
5
4
3
2
1
0
0
10
03nb77
VDD= 44 V
20
30
QG (nC)
T_j = 25 °C; I_D = 17 A
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
120
IS
(A)
100
80
60
40
20
03nb76
Tj = 175 ^OC
Tj = 25 ^OC
0
0.0
0.5
1.0
1.5
2.0
VSD (V)
V_GS = 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
9397 750 07677
Product specification
Rev. 01 — 29 January 2001
© Philips Electronics N.V. 2001. All rights reserved.
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