BUK7237-55A Datasheet, PDF (6/13 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
Table 5: Characteristics…continued
T_j = 25 °C unless otherwise specified
Symbol Parameter
Source-drain diode
V_SD
source-drain (diode forward)
voltage
t_rr
reverse recovery time
Q_r
recovered charge
Conditions
I_S = 15 A; V_GS = 0 V;
Figure 15
I_S = 20 A; dI_S/dt = −100 A/µs;
V_GS = −10 V; V_DS = 30 V
BUK7237-55A
TrenchMOS™ standard level FET
Min
Typ
Max Unit
−
0.85 1.2
V
−
40
−
ns
−
80
−
nC
120
ID
(A)
100
80
60
40
20
0
0
VGS (V) = 12 14 16
03nb81
18
20
11
10.5
9.5
8.5
7.5
6.5
5.5
4.5
2
4
6
8
10
VDS (V)
50
RDSon
(mΩ)
45
40
35
30
25
20
5
03nb80
10
15 _{VGS (V)} 20
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 17 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
80
RDSon
(mΩ)
70
5.5 6 _{6.5 7}
03nb82
VGS (V) =10
8
9
60
50
40
30
20
0
T_j = 25 °C
20
40
60
80
100
ID (A)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
2.2
a2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60 -20 20
03aa28
60 100 140 180
Tj (oC)
a = -------^R----^D----^S--^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain source on-state resistance
factor as a function of junction temperature.
9397 750 07677
Product specification
Rev. 01 — 29 January 2001
© Philips Electronics N.V. 2001. All rights reserved.
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