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BUK7237-55A Datasheet, PDF (5/13 Pages) NXP Semiconductors – TrenchMOS standard level FET
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Philips Semiconductors
BUK7237-55A
TrenchMOS™ standard level FET
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
VGS(th)
gate-source threshold voltage
IDSS
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state
resistance
Dynamic characteristics
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Ld
internal drain inductance
Ls
internal source inductance
Conditions
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 1 mA; VDS = VGS;
Figure 9
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 55 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 25 A;
Figure 7 and 8
Tj = 25 °C
Tj = 175 °C
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
VDD = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG = 10 Ω;
from drain lead from package to
centre of die
from source lead to source bond
pad
Min
Typ
Max Unit
55
−
−
V
50
−
−
V
2
3
4
V
1
−
−
V
−
−
4.4
V
−
0.05 10
µA
−
−
500
µA
−
2
100
nA
−
31
37
mΩ
−
−
74
mΩ
−
650
872
pF
−
170
205
pF
−
110
153
pF
−
10
−
ns
−
62
−
ns
−
24
−
ns
−
20
−
ns
−
2.5
−
nH
−
7.5
−
nH
9397 750 07677
Product specification
Rev. 01 — 29 January 2001
© Philips Electronics N.V. 2001. All rights reserved.
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